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EE-SX670-WR Omron Photo Microsensor
| Type | Grooved Type (Standard) |
|---|---|
| Luminous method | Non-modulated |
| Sensing method | Through-beam type |
| Sensing distance | 5 mm (slot width) |
| Operation mode | Dark-ON/Light-ON (selectable) |
| Standard sensing object | Opaque object (2 x 0.8 mm min.) |
| Differential distance elements | 0.025 mm max. |
| Light source （Peak wavelength） | Infrared LED (940 nm) |
| Indicator | Light indicator (red) |
| Power supply voltage | 5 to 24 VDC ±10% (ripple (p-p)10% max.) |
| Current consumption | 35 mA max. |
| Control output （Output type） | NPN Open collector output |
| Control output （Load power supply voltage） | 5 to 24 VDC |
| Control output （Load current） | 100 mA max. |
| Control output （Residual voltage） | 0.8 V max. (at 100 mA load current) 0.4 V max. (at 40 mA load current) |
| Response frequency elements | 1 kHz min. (average 3 kHz) （See “Measurement condition of Response frequency elements”） |
| Illumination on the surface receiver | Fluorescent light: 1000 lx max. |
| Ambient temperature | Operating: -25 to 55 ℃ Storage: -30 to 80 ℃ （with no icing or condensation） |
| Ambient humidity | Operating: 5 to 85% RH Storage: 5 to 95% RH （with no icing or condensation） |
| Vibration resistance | 20 to 2000 Hz, peak acceleration 100 m/s**2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods) |
| Shock resistance | 500 m/s**2, 3 times each in X, Y, and Z directions |
| Degree of protection （IEC60529） | IP50 |
| Connection method | Pre-wired models |
| Cable length | 1 m |
| Material | Case: Polybutylene phthalate (PBT) Emitter/Receiver Cover: Polycarbonate(PC) |
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